ELS-F125

 

Key Features:

  • 5 nm linewidth guaranteed at 125 kV
  • 1.7 nm beam diameter & minimum proximity effect at 125 kV
  • Superior large field writing:  Uniform 10 nm lines in entire 500um field
  • Small beam diameter even at high beam current; high throughput without compromising on resolution; 2 nm beam diameter at 1 nA
  • User-friendly Interface – CAD and SEM interfaces on Windows

WORLD’S FIRST 125 KV LITHOGRAPHY SYSTEM

The ELS-F125 provides the power to pattern lines down to 5 nm and the throughput to keep up with the pace of pioneering research. It is proof of Elionix’s extensive development history and unique approach toward electron beam lithography.

Specification

Electron Gun

Acceleration voltage

Beam current

Min. beam spot size

Writing field size

Min. / Max. field size

Scan clock

Min. beam position

Max. sample size

Max.writing area

Loading system

Software

ZrO/W Thermal Field Emitter

50kV

100kV

125kV

150kV

1nA
~1µA

20pA
~100nA

5pA
~100nA

5pA
~100nA

D5nm

D1.8nm

D1.7nm

D1.5nm

1000µm

1000um

500µm

500µm

Min lOOµm square
Max (Option) 3000µm square

Max 200MH z

O.lnm (at standard field)

8" (200mm) wafer I 12" (300mm) wafer

8" (200mm) square I 12" (300mm) square

Single autoloader
Multi autoloader
12" (300mm ) FOUP robot loader
PEB robot loader

elms

Beam conditions
Exposure schedule
Pattern data converter
Account management
Python scripting

Inquries Form