ELS-F150

Key Features:

  • 4 nm linewidth guaranteed at 150 kV
  • 1.5 nm beam diameter and minimum proximity effect at 150 kV
  • Wider process margin than 125 kV makes it easier to fabricate advanced nanodevices
  • Single cassette auto-loader that supports 8″ wafers is standard, multi-cassette auto-loader is optional

HIGH ACCELERATION VOLTAGE EBL SYSTEM

The ELS-F150 is the world’s first 150 kV electron beam lithography system. Expanding on the 100kV and 125kV systems, the ELS-F150 enables single-digit nanoscale device fabrication.

Specification

Electron Gun

Acceleration voltage

Beam current

Min. beam spot size

Writing field size

Min. / Max. field size

Scan clock

Min. beam position

Max. sample size

Max.writing area

Loading system

Software

ZrO/W Thermal Field Emitter

50kV

100kV

125kV

150kV

1nA
~1µA

20pA
~100nA

5pA
~100nA

5pA
~100nA

D5nm

D1.8nm

D1.7nm

D1.5nm

1000µm

1000um

500µm

500µm

Min lOOµm square
Max (Option) 3000µm square

Max 200MH z

O.lnm (at standard field)

8" (200mm) wafer I 12" (300mm) wafer

8" (200mm) square I 12" (300mm) square

Single autoloader
Multi autoloader
12" (300mm ) FOUP robot loader
PEB robot loader

elms

Beam conditions
Exposure schedule
Pattern data converter
Account management
Python scripting

Inquries Form