ELS-G100 (now the ELS-BODEN 100)

Key Features:

  • Generates patterns with a minimum line width of 6nm
  • Stable 1.8nm electron beam using high beam current at 100kV
  • A 20bit DAC provides high beam positioning resolution
  • At a beam current of 1nA, 20nm lines can be written over an entire 500μm field without stitching

HIGH PERFORMANCE 100 KV LITHOGRAPHY SYSTEM

The ELS-G100 (now the ELS-BODEN 100) produces a highly stable beam with a diameter as small 1.8nm, using acceleration voltages of up to 100kV and high beam currents. This allows fine patterns to be drawn with a line width of 6nm or less.

Specification

Electron Gun

Acceleration voltage

Beam current

Min. beam spot size

Writing field size

Min. / Max. field size

Scan clock

Min. beam position

Max. sample size

Max.writing area

Loading system

Software

ZrO/W Thermal Field Emitter

50kV

100kV

125kV

150kV

1nA
~1µA

20pA
~100nA

5pA
~100nA

5pA
~100nA

D5nm

D1.8nm

D1.7nm

D1.5nm

1000µm

1000um

500µm

500µm

Min lOOµm square
Max (Option) 3000µm square

Max 200MH z

O.lnm (at standard field)

8" (200mm) wafer I 12" (300mm) wafer

8" (200mm) square I 12" (300mm) square

Single autoloader
Multi autoloader
12" (300mm ) FOUP robot loader
PEB robot loader

elms

Beam conditions
Exposure schedule
Pattern data converter
Account management
Python scripting

Inquries Form