ELS-HS50

 

Key Features:

  • Largest beam current – 1uA
  • 10nm beam spot size at 100nA of beam current
  • 20nm minimal feature size at 1nA
  • Both single cassette or multiple cassette autoloaders are available

HIGHER THROUGHPUT THAN EXISTING EBL SYSTEMS

Reaching sub-micron scales unachievable via laser lithography. Designed for low volume device fabrication with minimal line edge roughness.

Specification

Electron Gun

Acceleration voltage

Beam current

Min. beam spot size

Writing field size

Min. / Max. field size

Scan clock

Min. beam position

Max. sample size

Max.writing area

Loading system

Software

ZrO/W Thermal Field Emitter

50kV

100kV

125kV

150kV

1nA
~1µA

20pA
~100nA

5pA
~100nA

5pA
~100nA

D5nm

D1.8nm

D1.7nm

D1.5nm

1000µm

1000um

500µm

500µm

Min lOOµm square
Max (Option) 3000µm square

Max 200MH z

O.lnm (at standard field)

8" (200mm) wafer I 12" (300mm) wafer

8" (200mm) square I 12" (300mm) square

Single autoloader
Multi autoloader
12" (300mm ) FOUP robot loader
PEB robot loader

elms

Beam conditions
Exposure schedule
Pattern data converter
Account management
Python scripting

Inquries Form